| PART |
Description |
Maker |
| IC62VV51216LL IC62VV51216L IC62VV51216L-70B IC62VV |
512K x 16 bit 1.8V and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS61LV5128-10 IS61LV5128-10B IS61LV5128-10BI IS61L |
IC,SRAM,512KX8,CMOS,TSOP,44PIN,PLASTIC
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
|
ISSI[Integrated Silicon Solution, Inc]
ISSI [Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| IS62C51216AL IS62C51216AL-55MLI IS62C51216AL-55TLI |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| EM680FU16 |
512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| EM6160FR16AW-12LF EM6160FV16AW-12LF EM6161FR16AW-1 |
512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Sol...
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| EM610FV16CW-12LL EM610FV16CW-55LL EM610FV16CW-55S |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| DS_K6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| EM621FS16EU-45L EM621FS8EU-45L EM621FT16EU-45L EM6 |
512K x8 bit Low Power Full CMOS Static RAM
|
http://
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| T15V4M08A T15V4M08A-70P T15V4M08A-55C |
512K X 8 LOW POWER CMOS STATIC RAM 12k × 8低功耗CMOS静态RAM
|
TMT[Taiwan Memory Technology]
TM Technology, Inc.
|
| K6F4008U2G-F K6F4008U2G |
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM 12k × 8位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM
2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM)
2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
|
Alliance Semiconductor Corporation
SEMICOA[Semicoa Semiconductor]
|
| K6T4008C K6T4008C1B K6T4008C1B-B K6T4008C1B-DB55 K |
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
RESISTOR 13K 1/16W 1
512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
